DS1225AB Description
Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP...
DS1225AB Key Features
- 10 years minimum data retention in the
- Data is automatically protected during power
- Directly replaces 8k x 8 volatile static RAM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 28-pin DIP package
- Read and write access times of 70 ns
- Lithium energy source is electrically
- Full ±10% VCC operating range (DS1225AD)
- Optional ±5% VCC operating range