DS1220Y Description
Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitor VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP...
DS1220Y Key Features
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Directly replaces 2k x 8 volatile static RAM or EEPROM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 24-pin DIP package
- Read and write access times of 100 ns
- Full ±10% operating range
- 40°C to +85°C, designated IND
- Address Inputs