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DS1270Y - 16M Nonvolatile SRAM

Description

A0 A20 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground NC - No Connect DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words

Features

  • 5 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Unlimited write cycles.
  • Low-power CMOS operation.
  • Read and write access times of 70 ns.
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.
  • Full ±10% VCC operating range (DS1270Y).
  • Optional ±5% VCC operating range (DS1270AB).
  • Optional industrial temperature range of -40°C to.

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Other Datasheets by Maxim Integrated (Analog Devices)

Part Number Description
DS1270AB 16M Nonvolatile SRAM
DS1270W 3.3V 16Mb Nonvolatile SRAM
DS1210 Nonvolatile Controller
DS1217M Nonvolatile Read/Write Cartridge
DS1218 Nonvolatile Controller

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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19-5615; Rev 11/10 www.maxim-ic.
Published: |