DS1265Y Datasheet - Maxim Integrated Products

8M Nonvolatile SRAM

DS1265Y Features

* 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electrically

DS1265Y General Description

A0 - A19 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+5V) - Ground - No Connect DESCRIPTION The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV S.

DS1265Y Datasheet (160.23 KB)