MSC010SDA070S
MSC010SDA070S is Zero Recovery Silicon Carbide Schottky Diode manufactured by Microchip Technology.
Overview
The silicon carbide (Si C) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070S device is a 700 V, 10 A Si C SBD in a TO-268 (D3PAK) package.
Features
The following are key features of the MSC010SDA070S device:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- Ro HS pliant
Benefits
The following are benefits of the MSC010SDA070S device:
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems
- Increased system power density
Applications
The MSC010SDA070S device is designed for the following applications:
- Power factor correction (PFC)
- Anti-parallel diode
- Switch-mode power supply
- Inverters/converters
- Motor controllers
- Freewheeling diode
- Switch-mode power supply
- Inverters/converters
- Snubber/clamp diode
© 2021 Microchip Technology Inc.
DS-00003841A-page 1
Device Specifications
1. Device Specifications
This section shows the specifications of the MSC010SDA070S device.
1.1 Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC010SDA070S device. TC = 25 °C unless otherwise specified.
Table 1-1. Absolute Maximum Ratings
Symbol VR VRRM VRWM IF
IFRM IFSM PTOT
Parameter
Ratings...
