MSC080SMA120B
MSC080SMA120B is N-Channel MOSFET manufactured by Microchip Technology.
Overview
1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (Si C) N-Channel MOSFET, TO-247.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- Ro HS pliant Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership Applications
- Photovoltaic (PV) inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
- Power supply and distribution
Data Sheet
© 2023 Microchip Technology Inc. and its subsidiaries
DS00004672B
- 1
MSC080SMA120B Device Specifications
1.
Device Specifications
This section shows the specifications of this device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of this device.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM VGS
Drain source voltage Continuous drain current at TC = 25 °C Continuous drain current at TC = 100 °C Pulsed drain current1 Gate-source voltage Transient gate-source voltage
Total power dissipation at TC = 25 °C
Linear derating...
