* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior avalanche ruggedness
* RoHS compliant Be
MSC080SMA120B4 Datasheet (3.48 MB)
MSC080SMA120B4
3.48 MB
N-channel power mosfet.
1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B4 Product Overview 1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (S.
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