Datasheet Summary
1200V, 80 mΩ N-Channel mSiC™ MOSFET
Product Overview
1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, TO-247 4-lead with a source sense.
DRAIN
(TERMINAL 1, BACKSIDE)
1 2 34
GATE
(TERMINAL 4)
SOURCE SENSE
(TERMINAL 3)
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and...