MSC750SMA170SA Datasheet | Microchip Technology

1700 V 750 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170SA device is a 1700 V, 750 mΩ SiC MOSFET in a TO-263 7-lead package with a source sense. Features The following are key Features of the MSC750SMA170SA device: - Low capacitances and low gate charge - Fast switching speed due to low internal gate resistance (ESR) - Stable operation at high junction temperature, TJ(max) = 175 °C - Fast and reliable body diode - Superior avalanche ruggedness -...