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VRF141MP - 175MHz RF Power MOSFET

Download the VRF141MP datasheet PDF. This datasheet also covers the VRF141 variant, as both devices belong to the same 175mhz rf power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Improved ruggedness V(BR)DSS = 80 V.
  • 150 W with 22 dB typical gain at 30 MHz, 28 V.
  • 150 W with 13 dB typical gain at 175 MHz, 28 V.
  • Excellent stability and low IMD.
  • Common source configuration.
  • Available in matched pairs (VRF141MP).
  • 30:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for MRF141.
  • RoHS compliant © 20.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VRF141-Microchip.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VRF141, VRF141MP 28 V, 150 W, 175 MHz RF Power MOSFET Product Overview The VRF141(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. Features • Improved ruggedness V(BR)DSS = 80 V • 150 W with 22 dB typical gain at 30 MHz, 28 V • 150 W with 13 dB typical gain at 175 MHz, 28 V • Excellent stability and low IMD • Common source configuration • Available in matched pairs (VRF141MP) • 30:1 load VSWR capability at specified operating conditions • Nitride passivated • Refractory gold metallization • High voltage replacement for MRF141 • RoHS compliant © 2021 Microchip Technology Inc.