Microchip Technology VRF141MP
The VRF141(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.FEATURES
● Improved ruggedness V(BR)DSS = 80 V● 150 W with 22 dB typical gain at 30 MHz, 28 V
● 150 W with 13 dB typical gain at 175 MHz, 28 V
● Excellent stability and low IMD
● Common source configuration
● Available in matched pairs (VRF141MP)
● 30:1 load VSWR capability at specified operating conditions
● Nitride passivated
● Refractory gold metallization
● High voltage replacement for MRF141
● RoHS compliant © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004329A-page 1 VRF141, VRF141MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF141(MP) device. 1.1
ABSOLUTE MAXIMUM RATINGS
The following table shows the absolute maximum ratings of the VRF141(MP) device. TC = 25 °C unless otherwise specified. Table 1-1.ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain source voltage Continuous drain current at TC = 25 °C Gate-source voltage Total power dissipation at TC = 25 °C Storage temperature range Ope...