VRF141G Datasheet | Microchip Technology

Overview The VRF141G is designed for broadband mercial and military applications at frequencies to 175 MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. Features - Improved ruggedness V(BR)DSS = 80 V - 300 W with 14 d B typical gain at 175 MHz, 28 V - Excellent stability and low IMD - mon source push-pull configuration - 5:1 load VSWR capability at specified operating conditions - Nitride passivated - Refractory gold metallization - High voltage replacement for MRF141G - Ro HS pliant © 2021 Microchip Technology Inc. and its subsidiaries DS-00004328A-page 1 Device Specifications 1. Device Specifications This section shows the specifications of the VRF141G device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the VRF141G device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain source voltage Continuous drain current Gate-source voltage Total power dissipation Storage temperature range Operating junction temperature Ratings Unit ±40 - 65 to 150 °C 1.2 Electrical Performance The following table shows the static characteristics of the VRF141G device. TC = 25 °C unless otherwise specified. Table 1-2. Static Characteristics Symbol Characteristic V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(th) Drain-source breakdown voltage On-state drain voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Gate-source threshold voltage Test Conditions VGS = 0 V, ID = 100 m A ID(ON) = 10 A, VGS = 10 V VDS = 60 V, VGS = 0 V VDS = ±20 V, VDS = 0 V VDS = 10 V, ID = 5 A VDS = 10 V, ID = 100 m A Min Typ Max Unit 1.0 m A 1.0...