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VRF141G - Dual RF Power MOSFET

Datasheet Summary

Description

Document migrated from Microsemi template to Microchip template; Assigned Microchip literatur

Features

  • Improved ruggedness V(BR)DSS = 80 V.
  • 300 W with 14 dB typical gain at 175 MHz, 28 V.
  • Excellent stability and low IMD.
  • Common source push-pull configuration.
  • 5:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for MRF141G.
  • RoHS compliant © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004328A-page 1 VRF141G Dev.

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Datasheet Details

Part number VRF141G
Manufacturer Microchip
File Size 427.60 KB
Description Dual RF Power MOSFET
Datasheet download datasheet VRF141G Datasheet
Additional preview pages of the VRF141G datasheet.

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Full PDF Text Transcription

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VRF141G 28 V, 300 W, 175 MHz Dual RF Power MOSFET Product Overview The VRF141G is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Improved ruggedness V(BR)DSS = 80 V • 300 W with 14 dB typical gain at 175 MHz, 28 V • Excellent stability and low IMD • Common source push-pull configuration • 5:1 load VSWR capability at specified operating conditions • Nitride passivated • Refractory gold metallization • High voltage replacement for MRF141G • RoHS compliant © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004328A-page 1 VRF141G Device Specifications 1.
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