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VRF141G - Dual RF Power MOSFET

General Description

Document migrated from Microsemi template to Microchip template; Assigned Microchip literatur

Key Features

  • Improved ruggedness V(BR)DSS = 80 V.
  • 300 W with 14 dB typical gain at 175 MHz, 28 V.
  • Excellent stability and low IMD.
  • Common source push-pull configuration.
  • 5:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for MRF141G.
  • RoHS compliant © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004328A-page 1 VRF141G Dev.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VRF141G 28 V, 300 W, 175 MHz Dual RF Power MOSFET Product Overview The VRF141G is designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. Features • Improved ruggedness V(BR)DSS = 80 V • 300 W with 14 dB typical gain at 175 MHz, 28 V • Excellent stability and low IMD • Common source push-pull configuration • 5:1 load VSWR capability at specified operating conditions • Nitride passivated • Refractory gold metallization • High voltage replacement for MRF141G • RoHS compliant © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS-00004328A-page 1 VRF141G Device Specifications 1.