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VRF141MP - 175MHz RF Power MOSFET

This page provides the datasheet information for the VRF141MP, a member of the VRF141 175MHz RF Power MOSFET family.

Datasheet Summary

Features

  • Improved ruggedness V(BR)DSS = 80 V.
  • 150 W with 22 dB typical gain at 30 MHz, 28 V.
  • 150 W with 13 dB typical gain at 175 MHz, 28 V.
  • Excellent stability and low IMD.
  • Common source configuration.
  • Available in matched pairs (VRF141MP).
  • 30:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for MRF141.
  • RoHS compliant © 20.

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Datasheet preview – VRF141MP

Datasheet Details

Part number VRF141MP
Manufacturer Microchip
File Size 565.88 KB
Description 175MHz RF Power MOSFET
Datasheet download datasheet VRF141MP Datasheet
Additional preview pages of the VRF141MP datasheet.

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Full PDF Text Transcription

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VRF141, VRF141MP 28 V, 150 W, 175 MHz RF Power MOSFET Product Overview The VRF141(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. Features • Improved ruggedness V(BR)DSS = 80 V • 150 W with 22 dB typical gain at 30 MHz, 28 V • 150 W with 13 dB typical gain at 175 MHz, 28 V • Excellent stability and low IMD • Common source configuration • Available in matched pairs (VRF141MP) • 30:1 load VSWR capability at specified operating conditions • Nitride passivated • Refractory gold metallization • High voltage replacement for MRF141 • RoHS compliant © 2021 Microchip Technology Inc.
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