VRF141MP Datasheet | Microchip Technology

Overview The VRF141(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband mercial and military applications requiring high power and gain without promising reliability, ruggedness, or inter-modulation distortion. Features - Improved ruggedness V(BR)DSS = 80 V - 150 W with 22 d B typical gain at 30 MHz, 28 V - 150 W with 13 d B typical gain at 175 MHz, 28 V - Excellent stability and low IMD - mon source configuration - Available in matched pairs (VRF141MP) - 30:1 load VSWR capability at specified operating conditions - Nitride passivated - Refractory gold metallization - High voltage replacement for MRF141 - Ro HS pliant © 2021 Microchip Technology Inc. and its subsidiaries DS-00004329A-page 1 VRF141, VRF141MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF141(MP) device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the VRF141(MP) device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain source voltage Continuous drain current at TC = 25 °C Gate-source voltage Total power dissipation at TC = 25 °C Storage temperature range Operating junction temperature Ratings Unit ±40 - 65 to 150 °C 1.2 Electrical Performance The following table shows the static characteristics of the VRF141(MP) device. TC = 25 °C unless otherwise specified. Table 1-2. Static Characteristics Symbol Characteristic V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(th) Drain-source breakdown voltage On-state drain voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Gate-source threshold voltage Test Conditions VGS = 0 V, ID = 100 m A ID(ON) = 10 A, VGS = 10 V VDS = 60 V, VGS = 0 V VDS = ±20 V, VGS = 0 V VDS = 10 V, ID = 5 A VDS = 10 V, ID = 100 m...