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M29W640FT Datasheet Preview

M29W640FT Datasheet

Parallel NOR Flash Embedded Memory

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64Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W640FT, M29W640FB
Features
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VPP = 12V for fast program (optional)
• Asynchronous random/page read
– Page width: 4 words
– Page access: 25ns
– Random access: 60ns, 70ns
• Program time
– 10µs per byte/word TYP
– 4 words/8 bytes program
• Memory organization
– 135 memory blocks
– 1 boot block and 7 parameter blocks, 8KB each
(top or bottom)
– 127 main blocks, 64KB each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume
– Read from any block during a PROGRAM SUS-
PEND operation
– Read or program another block during an ERASE
SUSPEND operation
• UNLOCK BYPASS PROGRAM command
– Faster production/batch programming
• VPP/WP# pin for fast program and write protect
• Temporary block unprotection mode
• Common Flash interface
– 64-bit security code
• Extended memory block
– Extra block used as security block or to store ad-
ditional information
• Low power consumption
– Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0020h
– Device code M29W640FT: 22EDh
– Device code M29W640FB: 22FDh
• RoHS-compliant packages
– 48-pin TSOP (N) 12mm x 20mm
– 48-ball TFBGA (ZA) 6mm x 8mm
PDF: 09005aef8551a2ac
m29w_640f.pdf - Rev. B 1/16 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

M29W640FT Datasheet Preview

M29W640FT Datasheet

Parallel NOR Flash Embedded Memory

No Preview Available !

64Mb: 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory
content bits erased to 1. For available options, such as packages or speed, or for further information, contact your
Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification compari-
son by device type is available at www.micron.com/products. Contact the factory for devices not found.
Table 1: Part Number Information
Part Number
Category
Device Type
Operating Voltage
Device Function
Array Matrix
Speed
Package
Temperature Range
Shipping Options
Category Details
M29 = Parallel Flash memory
W = VCC = 2.7 to 3.6V
640F = 64Mb (x8/x16) boot block
T = Top boot
B = Bottom boot
60 = 60ns
70 = 70ns
N = 48-pin TSOP: 12mm x 20mm
ZA = 48-ball TFBGA, 6mm x 8mm, 0.80mm pitch
6 = –40°C to 85°C
E = RoHS-compliant package, standard packing
F = RoHS-compliant package, tape and reel packing
PDF: 09005aef8551a2ac
m29w_640f.pdf - Rev. B 1/16 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.


Part Number M29W640FT
Description Parallel NOR Flash Embedded Memory
Maker Micron
Total Page 30 Pages
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