M29W640FT Datasheet Text
64Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W640FT, M29W640FB
Features
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VPP = 12V for fast program (optional)
- Asynchronous random/page read
- Page width: 4 words
- Page access: 25ns
- Random access: 60ns, 70ns
- Program time
- 10µs per byte/word TYP
- 4 words/8 bytes program
- Memory organization
- 135 memory blocks
- 1 boot block and 7 parameter blocks, 8KB each (top or bottom)
- 127 main blocks, 64KB each
- Program/erase controller
- Embedded byte/word program algorithms
- Program/erase suspend and resume
- Read from any block during a PROGRAM SUSPEND operation
- Read or program another block during an ERASE SUSPEND operation
- UNLOCK BYPASS PROGRAM mand
- Faster production/batch programming
- VPP/WP# pin for fast program and write protect
- Temporary block unprotection mode
- mon Flash interface
- 64-bit security code
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