64Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W640FT, M29W640FB
Features
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VPP = 12V for fast program (optional)
• Asynchronous random/page read
– Page width: 4 words
– Page access: 25ns
– Random access: 60ns, 70ns
• Program time
– 10µs per byte/word TYP
– 4 words/8 bytes program
• Memory organization
– 135 memory blocks
– 1 boot block and 7 parameter blocks, 8KB each
(top or bottom)
– 127 main blocks, 64KB each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume
– Read from any block during a PROGRAM SUS-
PEND operation
– Read or program another block during an ERASE
SUSPEND operation
• UNLOCK BYPASS PROGRAM command
– Faster production/batch programming
• VPP/WP# pin for fast program and write protect
• Temporary block unprotection mode
• Common Flash interface
– 64-bit security code
• Extended memory block
– Extra block used as security block or to store ad-
ditional information
• Low power consumption
– Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0020h
– Device code M29W640FT: 22EDh
– Device code M29W640FB: 22FDh
• RoHS-compliant packages
– 48-pin TSOP (N) 12mm x 20mm
– 48-ball TFBGA (ZA) 6mm x 8mm
PDF: 09005aef8551a2ac
m29w_640f.pdf - Rev. B 1/16 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
