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MT40A4G4 - 1.2V DDR4 SDRAM

Description

TwinDie™ 1.2V DDR4 SDRAM MT40A4G4 128 Meg x 4 x 16 Banks x 2 Ranks MT40A2G8

The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die (essentially two ranks of the 8Gb DDR4 SDRAM).

Features

  • Uses 8Gb Micron die.
  • Two ranks (includes dual CS#, ODT, and CKE balls).
  • Each rank has 4 groups of 4 internal banks for con- current operation.
  • VDD = VDDQ = 1.2V (1.14.
  • 1.26V).
  • 1.2V VDDQ-terminated I/O.
  • JEDEC-standard ball-out.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycles in 32ms Options.

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Datasheet preview – MT40A4G4

Datasheet Details

Part number MT40A4G4
Manufacturer Micron Technology
File Size 402.16 KB
Description 1.2V DDR4 SDRAM
Datasheet download datasheet MT40A4G4 Datasheet
Additional preview pages of the MT40A4G4 datasheet.

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Full PDF Text Transcription

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16Gb: x4, x8 TwinDie DDR4 SDRAM Description TwinDie™ 1.2V DDR4 SDRAM MT40A4G4 – 128 Meg x 4 x 16 Banks x 2 Ranks MT40A2G8 – 64 Meg x 8 x 16 Banks x 2 Ranks Description The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die (essentially two ranks of the 8Gb DDR4 SDRAM). Refer to Micron’s 8Gb DDR4 SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT40A2G4 correlate to TwinDie manufacturing part number MT40A4G4; specifications for base part number MT40A1G8 correlate to TwinDie manufacturing part number MT40A2G8. Features • Uses 8Gb Micron die • Two ranks (includes dual CS#, ODT, and CKE balls) • Each rank has 4 groups of 4 internal banks for con- current operation • VDD = VDDQ = 1.2V (1.14–1.26V) • 1.
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