Datasheet4U.com

MT49H16M16 - 2 Meg x 16 x 8 Banks Reduced Latency DRAM

Product Overview

Micron

📥 Download Datasheet

MT49H16M16 2 Meg x 16 x 8 Banks Reduced Latency DRAM by Micron - Datasheet Preview — Datasheet preview – MT49H16M16

Datasheet Details

Part number	MT49H16M16
Manufacturer	Micron
File Size	1.24 MB
Description	2 Meg x 16 x 8 Banks Reduced Latency DRAM
Datasheet	MT49H16M16 Datasheet
Note	This datasheet PDF includes multiple part numbers: MT49H16M16, MT49H8M32. Please refer to the document for exact specifications by model.
Additional preview pages of the MT49H16M16 datasheet.

Product details

Features

Reduced Latency DRAM (RLDRAM®) MT49H8M32.
1 Meg x 32 x 8 Banks MT49H16M16.
2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www. micron. com/products/dram/rldram/ Features.
Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks.
Cyclic bank addressing for maximum data bandwidth.
Non multiplexed addresses.
Non interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR.
Up to 600 Mb/sec/pi.

📁 Similar Datasheet

MT49H16M18 - 16 Meg x 18 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H16M18C - SIO RLDRAM 2 (Micron Technology)
MT49H32M9 - 32 Meg x 9 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H8M36 - 8 Meg x 36 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT4903 - P-Channel MOSFET (MT Semiconductor)
MT4914 - Dual N-Channel Power MOSFET (MOS-TECH)
MT4936 - N-Channel Power MOSFET (MOS-TECH)
MT4946 - N-Channel Power MOSFET (MOS-TECH)

Other Datasheets by Micron

MT49H16M36 - 576Mb CIO Reduced Latency
MT49H32M18 - 576Mb CIO Reduced Latency
MT49H64M9 - 576Mb CIO Reduced Latency
MT49H8M32 - 1 Meg x 32 x 8 Banks Reduced Latency DRAM
MT4067-P - 256K x 1 DRAM
MT40A1G16 - 1.2V DDR4 SDRAM

Published: Jan 12, 2018 |