Datasheet4U.com

MT49H32M18 - 576Mb CIO Reduced Latency

This page provides the datasheet information for the MT49H32M18, a member of the MT49H16M36 576Mb CIO Reduced Latency family.

Product Overview

Micron

📥 Download Datasheet

MT49H32M18 576Mb CIO Reduced Latency by Micron - Datasheet Preview — Datasheet preview – MT49H32M18

Datasheet Details

Part number	MT49H32M18
Manufacturer	Micron
File Size	1.43 MB
Description	576Mb CIO Reduced Latency
Datasheet	MT49H32M18 Datasheet
Additional preview pages of the MT49H32M18 datasheet.

MT49H32M18 Product details

Features

CIO RLDRAM 2 MT49H64M9.
64 Meg x 9 x 8 Banks MT49H32M18.
32 Meg x 18 x 8 Banks MT49H16M36.
16 Meg x 36 x 8 Banks Features.
533 MHz DDR operation (1.067 Gb/s/pin data rate).
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
Organization.
64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O.
8 banks.
Reduced cycle time (15ns at 533 MHz).
Nonmultiplexed addresses (address multiplexing option available).

📁 Similar Datasheet

MT49H32M9 - 32 Meg x 9 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H16M18 - 16 Meg x 18 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H16M18C - SIO RLDRAM 2 (Micron Technology)
MT49H8M36 - 8 Meg x 36 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT4903 - P-Channel MOSFET (MT Semiconductor)
MT4914 - Dual N-Channel Power MOSFET (MOS-TECH)
MT4936 - N-Channel Power MOSFET (MOS-TECH)
MT4946 - N-Channel Power MOSFET (MOS-TECH)
MT4953 - Dual P-Channel High Density Trench MOSFET (matrix microtech)
MT4953 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (ETC)

Other Datasheets by Micron

MT49H16M16 - 2 Meg x 16 x 8 Banks Reduced Latency DRAM
MT49H16M36 - 576Mb CIO Reduced Latency
MT49H64M9 - 576Mb CIO Reduced Latency
MT49H8M32 - 1 Meg x 32 x 8 Banks Reduced Latency DRAM
MT4067-P - 256K x 1 DRAM
MT40A1G16 - 1.2V DDR4 SDRAM
MT40A1G4 - DDR4 SDRAM
MT40A1G8 - DDR4 SDRAM

Published: Dec 7, 2017 |