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MT49H32M18 - 576Mb CIO Reduced Latency

Download the MT49H32M18 datasheet PDF. This datasheet also covers the MT49H16M36 variant, as both devices belong to the same 576mb cio reduced latency family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • CIO RLDRAM 2 MT49H64M9.
  • 64 Meg x 9 x 8 Banks MT49H32M18.
  • 32 Meg x 18 x 8 Banks MT49H16M36.
  • 16 Meg x 36 x 8 Banks Features.
  • 533 MHz DDR operation (1.067 Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • Organization.
  • 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O.
  • 8 banks.
  • Reduced cycle time (15ns at 533 MHz).
  • Nonmultiplexed addresses (address multiplexing option available).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT49H16M36-Micron.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MT49H32M9 32 Meg x 9 x 8 Banks CIO RLDRAM 2 Micron Technology
MT49H16M18 16 Meg x 18 x 8 Banks CIO RLDRAM 2 Micron Technology
MT49H16M18C SIO RLDRAM 2 Micron Technology
MT49H8M36 8 Meg x 36 x 8 Banks CIO RLDRAM 2 Micron Technology
MT4903 P-Channel MOSFET MT Semiconductor

Other Datasheets by Micron Technology

Part Number Description
MT49H16M16 2 Meg x 16 x 8 Banks Reduced Latency DRAM
MT49H16M36 576Mb CIO Reduced Latency
MT49H64M9 576Mb CIO Reduced Latency
MT49H8M32 1 Meg x 32 x 8 Banks Reduced Latency DRAM
MT4067-P 256K x 1 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
576Mb: x9 x18 x36 CIO RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features • 533 MHz DDR operation (1.067 Gb/s/pin data rate) • 38.