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MT49H8M32 - 1 Meg x 32 x 8 Banks Reduced Latency DRAM

Key Features

  • Reduced Latency DRAM (RLDRAM®) MT49H8M32.
  • 1 Meg x 32 x 8 Banks MT49H16M16.
  • 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www. micron. com/products/dram/rldram/ Features.
  • Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks.
  • Cyclic bank addressing for maximum data bandwidth.
  • Non multiplexed addresses.
  • Non interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR.
  • Up to 600 Mb/sec/pi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM (RLDRAM®) MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/ Features • Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks • Cyclic bank addressing for maximum data bandwidth • Non multiplexed addresses • Non interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR • Up to 600 Mb/sec/pin data rate • Programmable READ latency (RL) of 5-6 • Data valid signal (DVLD) activated as read data is available • Data mask signals (DM0/DM1) to mask first and • second part of write data burst • IEEE 1149.1 compliant JTAG boundary scan • 2.5V VEXT, 1.8V VDD, 1.