MT49H16M16
MT49H16M16 is 2 Meg x 16 x 8 Banks Reduced Latency DRAM manufactured by Micron Technology.
- Part of the MT49H8M32 comparator family.
- Part of the MT49H8M32 comparator family.
Features
Reduced Latency DRAM (RLDRAM®)
MT49H8M32
- 1 Meg x 32 x 8 Banks MT49H16M16
- 2 Meg x 16 x 8 Banks
For the latest data sheet, refer to Micron’s Web site: .micron./products/dram/rldram/
Features
- Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks
- Cyclic bank addressing for maximum data bandwidth
- Non multiplexed addresses
- Non interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR
- Up to 600 Mb/sec/pin data rate
- Programmable READ latency (RL) of 5-6
- Data valid signal (DVLD) activated as read data is available
- Data mask signals (DM0/DM1) to mask first and
- second part of write data burst
- IEEE 1149.1 pliant JTAG boundary scan
- 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O
- Pseudo-HSTL 1.8V I/O Supply
- Internal auto precharge
- Refresh requirements: 32ms at 95°C case temperature (8K refresh for each bank, 64K refresh mand must be issued in...
