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MT5C1001 - 1 Meg x 1 SRAM

General Description

The MT5C1001 is organized as a 1,048,576 x 1 SRAM using a four-transistor m

Key Features

  • High speed: 12,15,17,20,25 and 35.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ±1O% power supply.
  • Easy memory expansion with CE option.
  • All inputs and outputs are TIL-compatible.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM FEATURES • High speed: 12,15,17,20,25 and 35 • High-performance, low-power, CMOS double-metal process • Single +5V ±1O% power supply • Easy memory expansion with CE option • All inputs and outputs are TIL-compatible OPTIONS • Timing 12ns access 15ns access 17ns access 20ns access 25ns access 35ns access MARKING -12 -15 -17 -20 -25 -35 • Packages Plastic DIP (400 mil) Plastic SOJ (400 mil) Plastic SOJ (300 mil) None DJ SJ • 2V data retention • 2V data retention, low power L LP • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C1001DJ-20 IT NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available.