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EDB8132B4PB-8D-F - Embedded LPDDR2 SDRAM

Features

  • Embedded LPDDR2 SDRAM EDB8132B4PB-8D-F Features.
  • Ultra-low-voltage core and I/O power supplies.
  • Frequency range.
  • 400 MHz (data rate: 800 Mb/s/pin).
  • 4n prefetch DDR architecture.
  • 8 internal banks for concurrent operation.
  • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge.
  • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c).
  • Programmable READ and WRITE latencies.

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Datasheet preview – EDB8132B4PB-8D-F

Datasheet Details

Part number EDB8132B4PB-8D-F
Manufacturer Micron Technology
File Size 1.95 MB
Description Embedded LPDDR2 SDRAM
Datasheet download datasheet EDB8132B4PB-8D-F Datasheet
Additional preview pages of the EDB8132B4PB-8D-F datasheet.

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Full PDF Text Transcription

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Embedded LPDDR2 SDRAM Features Embedded LPDDR2 SDRAM EDB8132B4PB-8D-F Features • Ultra-low-voltage core and I/O power supplies • Frequency range – 400 MHz (data rate: 800 Mb/s/pin) • 4n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 4, 8, and 16 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-stop capability • Lead-free (RoHS-compliant) and halogen
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