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MT28F320A18 - FLASH MEMORY

General Description

table.

Common flash interface See page 36 for mechanical drawing.

100,000 WRITE/ERASE cycles per block (VPP = VPP1) OPTIONS MARKING An extended voltage range of 1.65V 2.20V for Vcc and VccQ, and 0.9V 2.20V for Vpp is available upon request

Key Features

  • MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology Ball Assignment 32Mb block architecture 47-Ball FBGA.
  • Seventy-one erasable blocks:.
  • Eight 4K-word parameter blocks.
  • Sixty-three 32K-word main memory blocks VCC, VCCQ, VPP voltages.
  • 1.65V (MIN), 1.95V (MAX) VCC, VCCQ 1 2 3 4 5 6 7 8.
  • 0.9V (MIN), 1.95V (MAX) VPP (in-system WP# A4 VPP A8 A19 A11 A7 A A13.

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Full PDF Text Transcription for MT28F320A18 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MT28F320A18. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 2 MEG x 16 1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES MT28F320A18 Low Voltage, Extended Temperature 0.15µm Process Technology Ball A...

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A18 Low Voltage, Extended Temperature 0.15µm Process Technology Ball Assignment 32Mb block architecture 47-Ball FBGA • Seventy-one erasable blocks: • Eight 4K-word parameter blocks • Sixty-three 32K-word main memory blocks VCC, VCCQ, VPP voltages* • 1.65V (MIN), 1.95V (MAX) VCC, VCCQ 1 2 3 4 5 6 7 8 • 0.9V (MIN), 1.95V (MAX) VPP (in-system WP# A4 VPP A8 A19 A11 A7 A A13 • PROGRAM/ERASE) • 12V ±5% (HV) VPP tolerant (factory programming A18 A2 WE# A17 A10 RP# A5 B A14 compatibility) Random access time: 70ns @ 1.65V VCC A20 A1 A9 A6 A12 A3 C A15 Low power consumption (VCC = 1.

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