MT28F322D18 Micron Technology Datasheet

MT28F322D18 Key Features

• Flexible dual-bank architecture
• Support for true concurrent operation with zero latency
• Read bank a during program bank b and vice versa
• Read bank a during erase bank b and vice versa
• Basic configuration: Seventy-one erasable blocks
• Bank a (8Mb for data storage)
• Bank b (24Mb for program storage)
• VCC, VCCQ, VPP voltages
• 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only)
• 0.9V (TYP) VPP (in-system PROGRAM/ERASE)