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MT28F322D18 - FLASH MEMORY

Description

Table.

See page 43 for mechanical drawing.

Timing 70ns access 80ns access Frequency 54 MHz 40 MHz No burst operation Boot Block Configuration Top Bottom Package 58-ball FBGA (8 x 7 ball grid) Operating Temperature Range Extended (-40ºC to +8

Features

  • Flexible dual-bank architecture.
  • Support for true concurrent operation with zero latency.
  • Read bank a during program bank b and vice versa.
  • Read bank a during erase bank b and vice versa.
  • Basic configuration: Seventy-one erasable blocks.
  • Bank a (8Mb for data storage).
  • Bank b (24Mb for program storage).
  • VCC, VCCQ, VPP voltages.
  • 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only).
  • 1.80V VCC, VCCQ (MIN); 2.

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www.DataSheet4U.com 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa • Basic configuration: Seventy-one erasable blocks – Bank a (8Mb for data storage) – Bank b (24Mb for program storage) • VCC, VCCQ, VPP voltages – 1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only) – 1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V VCCQ (MAX) (MT28F322D20 only) – 0.9V (TYP) VPP (in-system PROGRAM/ERASE) – 12V ±5% (HV) VPP tolerant (factory programming compatibility) • Random access time: 70ns/80ns @ 1.
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