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MT28F322P3 Datasheet

Manufacturer: Micron Technology
MT28F322P3 datasheet preview

Datasheet Details

Part number MT28F322P3
Datasheet MT28F322P3_MicronTechnology.pdf
File Size 414.93 KB
Manufacturer Micron Technology
Description FLASH MEMORY
MT28F322P3 page 2 MT28F322P3 page 3

MT28F322P3 Overview

See page 35 for mechanical drawing. OPTIONS Timing 70ns access 80ns access Boot Block Configuration Top Bottom Package 48-ball FBGA (6 x 8 ball grid) Operating Temperature Range mercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) Part Number Example: 7/02 1 ©2002, Micron Technology, Inc.

MT28F322P3 Key Features

  • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank
  • Basic configuration: Seventy-one erasable blocks Bank a (8Mb for data storage) Bank b (24Mb for program storage)
  • VCC, VCCQ, VPP voltages 2.7V (MIN), 3.3V (MAX) VCC 2.2V (MIN), 3.3V (MAX) VCCQ 3.0V (TYP) VPP (in-system PROGRAM/ERASE)
  • Random access time: 70ns @ 2.7V VCC
  • Page Mode read access Eight-word page Interpage read access: 70ns @ 2.7V Intrapage read access: 30ns @ 2.7V
  • Low power consumption (VCC = 3.3V) Asynchronous/interpage READ < 15mA Intrapage READ < 7mA WRITE < 20mA (MAX) ERASE < 25
  • Enhanced write and erase suspend options ERASE-SUSPEND-to-READ within same bank PROGRAM-SUSPEND-to-READ within same bank
  • Dual 64-bit chip protection registers for security purposes
  • Cross-patible mand support Extended mand set mon flash interface
  • PROGRAM/ERASE cycle 100,000 WRITE/ERASE cycles per block
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MT28F322P3 Distributor

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