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MT28F800B3 - FLASH MEMORY

Download the MT28F800B3 datasheet PDF. This datasheet also covers the MT28F008B3 variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

MT28F008B3 MT28F800B3 T B None ET VG WG SG The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits).

Key Features

  • Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks.
  • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28F008B3_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MT28F800B3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MT28F800B3. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) FEATURES • Eleven erase blocks: 40-Pin 16KB/8K-w...

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Dual Supply (Smart 3) FEATURES • Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time: 90ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence DataSheet4U.

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