Description
DDR3L SDRAM
MT41K512M4
64 Meg x 4 x 8 banks MT41K256M8
32 Meg x 8 x 8 banks MT41K128M16
16 Meg x 16 x 8 banks
Description
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device.Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Features
- VDD = VDDQ = 1.35V (1.283.
- 1.45V).
- Backward-compatible to VDD = VDDQ = 1.5V ±0.075V.
- Differential bidirectional data strobe.
- 8n-bit prefetch architecture.
- Differential clock inputs (CK, CK#).
- 8 internal banks.
- Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals.
- Programmable CAS (READ) latency (CL).
- Programmable posted CAS additive latency (AL).
- Programmable CAS (WRITE) l.
MT41K512M4_MicronTechnology.pdf