MT41K1G8 Overview
Key Features
- Uses 4Gb Micron die
- Two ranks (includes dual CS#, ODT, CKE, and ZQ balls)
- Each rank has eight internal banks for concurrent operation
- VDD = V DDQ = 1.35V (1.283–1.45V); backward compatible to V DD = V DDQ = 1.5V ±0.075V
- 1.35V center-terminated push/pull I/O
- JEDEC-standard ball-out
- Low-profile package
