MT41K1G8 Overview
Refer to Micron’s 4Gb DDR3 SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT41K1G4 correlate to TwinDie manufacturing part number MT41K2G4; specifications for base part number MT41K512M8 correlate to TwinDie manufacturing part number MT41K1G8.
MT41K1G8 Key Features
- Uses 4Gb Micron die
- Two ranks (includes dual CS#, ODT, CKE, and ZQ balls)
- Each rank has eight internal banks for concurrent operation
- VDD = V DDQ = 1.35V (1.283-1.45V); backward patible to V DD = V DDQ = 1.5V ±0.075V
- 1.35V center-terminated push/pull I/O
- JEDEC-standard ball-out
- Low-profile package
- TC of 0°C to 95°C
- 0°C to 85°C: 8192 refresh cycles in 64ms
- 85°C to 95°C: 8192 refresh cycles in 32ms