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MT41K1G16 - 1.35V DDR3L SDRAM

Description

TwinDie™ 1.35V DDR3L SDRAM MT41K1G16

The 16Gb (TwinDie™) 1.35V DDR3L SDRAM uses two Micron 8Gb DDR3L SDRAM x16 die for essentially two ranks of 8Gb DDR3L SDRAM.

Features

  • Uses two 8Gb x16 Micron die in one package.
  • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls).
  • VDD = VDDQ = 1.35V (1.283.
  • 1.425V); backward com- patible to 1.5V operation.
  • 1.35V center-terminated push/pull I/O.
  • JEDEC-standard ballout.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycles in 32ms Options.
  • Configuration.
  • 64 Me.

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Datasheet preview – MT41K1G16

Datasheet Details

Part number MT41K1G16
Manufacturer Micron Technology
File Size 285.73 KB
Description 1.35V DDR3L SDRAM
Datasheet download datasheet MT41K1G16 Datasheet
Additional preview pages of the MT41K1G16 datasheet.

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Full PDF Text Transcription

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16Gb: x16 TwinDie DDR3L SDRAM Description TwinDie™ 1.35V DDR3L SDRAM MT41K1G16 – 64 Meg x 16 x 2 Banks Description The 16Gb (TwinDie™) 1.35V DDR3L SDRAM uses two Micron 8Gb DDR3L SDRAM x16 die for essentially two ranks of 8Gb DDR3L SDRAM. Refer to Micron’s 8Gb DDR3L SDRAM base part number MT41K512M16 (monolithic) data sheet for the specifications not included in this document. Features • Uses two 8Gb x16 Micron die in one package • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • VDD = VDDQ = 1.35V (1.283–1.425V); backward com- patible to 1.5V operation • 1.
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