* VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
* Bidirectional data strobe per byte of data (DQS)
* Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
* Differential clock inputs (CK and CK#)
* Commands entered on each positive
MT46H8M16LF Datasheet (3.12 MB)
MT46H8M16LF
Micron Technology
3.12 MB
Mobile low-power ddr sdram.
www.DataSheet4U.com Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H8M16LF 2 Meg x 16 x 4 Banks For a.
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