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MT46H8M16LF Datasheet Mobile Low-Power DDR SDRAM

Manufacturer: Micron Technology

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Overview

www.DataSheet4U.com Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds.

Key Features

  • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V.
  • Bidirectional data strobe per byte of data (DQS).
  • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
  • Differential clock inputs (CK and CK#).
  • Commands entered on each positive CK edge.
  • DQS edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Four internal banks for concurrent operation.
  • Data masks (DM) for masking write data.

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