MT46V4M32

Manufacturer: Micron Technology

MT46V4M32 datasheet by Micron Technology.

MT46V4M32 Datasheet Details

m o .c U 4 DOUBLE eDATA RATE et h (DDR) S SDRAM a t a D.

VDD = +2.5V ±0.125V, VDDQ = +2.5V ±0.125V
Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture
Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
Reduced output drive option
Differential clock inputs (CK and CK#)
mands entered on each positive CK edge
DQS edge-aligned with data for READs; centeraligned with data for WRITEs
DLL to align DQ and DQS transitions with CK
Four internal banks for concurrent operation
Data mask (DM) for masking write data

Part Number	Description
MT46V128M4	Double Data Rate (DDR) SDRAM
MT46V128M8	DDR SDRAM
MT46V16M16	Double Data Rate (DDR) SDRAM
MT46V16M8	(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
MT46V256M4	DDR SDRAM
MT46V2M32	DOUBLE DATA RATE DDR SDRAM
MT46V2M32V1	DOUBLE DATA RATE DDR SDRAM
MT46V32M16	Double Data Rate (DDR) SDRAM
MT46V32M4	(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
MT46V32M8	Double Data Rate (DDR) SDRAM