MT4LC16M4G3 Datasheet, Micron Technology

* Single +3.3V ±0.3V power supply
* Industry-standard x4 pinout, timing, functions, and packages
* 12 row, 12 column addresses (H9) or 13 row, 11 column addre.

The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits eac.