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MT4LC16M4H9 - DRAM

This page provides the datasheet information for the MT4LC16M4H9, a member of the MT4LC16M4G3 DRAM family.

Product Overview

Micron Technology

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MT4LC16M4H9 DRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT4LC16M4H9

Datasheet Details

Part number	MT4LC16M4H9
Manufacturer	Micron Technology
File Size	386.19 KB
Description	DRAM
Datasheet	MT4LC16M4H9 Datasheet
Additional preview pages of the MT4LC16M4H9 datasheet.

MT4LC16M4H9 Product details

Description

The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each.

Features

Single +3.3V ±0.3V power supply.
Industry-standard x4 pinout, timing, functions, and packages.
12 row, 12 column addresses (H9) or 13 row, 11 column addresses (G3).
High-performance CMOS silicon-gate process.
All inputs, outputs and clocks are LVTTL-compatible.
Extended Data-Out (EDO) PAGE MODE access.
Optional self refresh (S) for low-power data retention.
4,096-cycle CAS#-BEFORE-RAS# (CBR).

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Other Datasheets by Micron Technology

MT4LC16M4A7 - DRAM
MT4LC16M4G3 - DRAM
MT4LC16M4T8 - DRAM
MT4LC1M16E5 - EDO DRAM
MT4LC2M8A1 - (MT4LC2M8A1/2) 2M x 8 DRAM
MT4LC2M8A2 - (MT4LC2M8A1/2) 2M x 8 DRAM
MT4LC2M8B1 - 2M x 8 FPM DRAM
MT4LC2M8B1 - (MT4LC2M8B1/2) 2M x 8 DRAM

Published: Jan 16, 2006 |