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2N1890, 2N1711 Datasheet - Microsemi

2N1890 NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C Symbol VCBO VEBO IC P.

2N1711-Microsemi.pdf

This datasheet PDF includes multiple part numbers: 2N1890, 2N1711. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N1890, 2N1711

Manufacturer:

Microsemi ↗

File Size:

48.61 KB

Description:

Npn low power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N1890, 2N1711.
Please refer to the document for exact specifications by model.

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2N1890 2N1711 NPN LOW POWER SILICON TRANSISTOR Microsemi