2N1890S Datasheet | VPT Components

Features - Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225 - TO-5 and TO-39 Packages - General Purpose Transistors for Low Power Applications - Ideal for High Performance Low Noise Amplifiers, Oscillators and Switching Circuits Electrical Characteristics (25o C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Test Conditions IC = 30 m A dc 2N1711, 2N1711S 2N1890, 2N1890S Symbol Units Min. V(BR)CEO V dc Collector - Emitter Breakdown Voltage IC = 100 m A dc, RBE = 10 Ω 2N1711, 2N1711S 2N1890, 2N1890S V(BR)CER V dc Max. - - Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCB = 60 V dc 2N1711, 2N1711S ICBO1 n A dc - 10 VCB = 80 V dc 2N1890, 2N1890S VEB = 5 Vdc IEBO1 n A...