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2N2060 - UNITIZED DUAL NPN SILICON TRANSISTOR

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TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2N2060 60 100 7.0 500 Unit Vdc Vdc Vdc mAdc One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 PT @ TC = +250C (2) 1.5 2.12 Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg 0 0 0 1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.
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