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2N2219 - NPN-SWITCHIN SILICON TRANSISTOR

Download the 2N2219 datasheet PDF. This datasheet also covers the 2N2218A variant, as both devices belong to the same npn-switchin silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2218A_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL LEVELS JANSM – 3K Rads (Si) JANSD – 10K Rads (Si) JANSP – 30K Rads (Si) JANSL – 50K Rads (Si) JANSR – 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N2218 2N2218A; L 2N2219 2N2219A; L Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 60 75 Emitter-Base Voltage VEBO 5.0 6.0 Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Operating & Storage Junction Temp.