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  Microsemi Electronic Components Datasheet  

2N2219 Datasheet

NPN-SWITCHIN SILICON TRANSISTOR

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
RADIATION HARDENED
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
DEVICES
2N2218
2N2218A
2N2218AL
2N2219
2N2219A
2N2219AL
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N2218 2N2218A; L
2N2219 2N2219A; L
Collector-Emitter Voltage
VCEO
30
50
Collector-Base Voltage
VCBO
60
75
Emitter-Base Voltage
VEBO
5.0
6.0
Collector Current
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
Operating & Storage Junction Temp. Range
IC
PT
Top, Tstg
800
0.8
3.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mA
W
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Case
RθJC
Note: (1) Derate linearly 4.6mW/°C above TA > +25°C
(2) Derate linearly 17.0mW/°C above TC > +25°C
Value
59
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IE = 10mAdc
2N2218; 2N2219
2N2218A; 2N2219A; L
V(BR)CEO
30
50
Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 6.0Vdc
VEB = 4.0Vdc
Collector-Base Cutoff Current
VCE = 30Vdc
VCE = 50Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L
All Types
2N2218; 2N2219
2N2218A; 2N2219A; L
IEBO
ICES
10 μAdc
10 ηAdc
10
10 ηAdc
10
TO-39 (TO-205AD)
2N2218, 2N2218A
2N2219, 2N2219A
TO-5
2N2218AL
2N2219AL
T4-LDS-0090 Rev. 1 (082523)
Page 1 of 3


  Microsemi Electronic Components Datasheet  

2N2219 Datasheet

NPN-SWITCHIN SILICON TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
RADIATION HARDENED
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Con’t)
Parameters / Test Conditions
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 60Vdc
VCB = 60Vdc
VCB = 75Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
Symbol
ICBO
ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
2N2218; A; AL
2N2219; A; AL
hFE
IC = 500mAdc, VCE = 10Vdc
2N2218; A; AL
2N2219; A; AL
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
VCE(sat)
Min.
20
35
30
50
25
50
35
75
35
75
40
100
40
100
20
30
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
VBE(sat)
0.6
0.6
Max.
10
10
10
10
Unit
ηAdc
μAdc
150
325
150
325
120
300
0.4
0.3
Vdc
1.6
1.0
1.3
1.2
Vdc
2.6
2.0
T4-LDS-0090 Rev. 1 (082523)
Page 2 of 3


Part Number 2N2219
Description NPN-SWITCHIN SILICON TRANSISTOR
Maker Microsemi
Total Page 3 Pages
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