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2N2219A - Silicon NPN Power Transistor

General Description

Collector Current- IC= 0.8A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) APPLICATIONS

amplification.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2219A VALUE 75 40 6 0.8 0.2 0.8 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 187.5 UNIT K/W isc Website：www.iscsemi.