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2N2219A integrated circuit image

2N2219A Datasheet

The 2N2219A is a Small Signal Switching Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2N2219A
Manufactureronsemi
Overview 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features • MIL−PRF−19500/251 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted).
* MIL−PRF−19500/251 Qualified
* Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 50 Collector −Base Voltage VCBO 75 Emitter −Base Voltage VEBO 6.0 Collector Current − Continuous IC 800 To.
Part Number2N2219A
DescriptionNPN-SWITCHIN SILICON TRANSISTOR
ManufacturerMicrosemi
Overview 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: // TECHNICAL DATA SHEET RADIATION HARDENED NPN-SWITCHIN SILICON TRANSISTOR Qua. TA > +25°C (2) Derate linearly 17.0mW/°C above TC > +25°C Value 59 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IE = 10mAdc 2N2218; 2N2219 2N2218A; 2N2219A; .
Part Number2N2219A
DescriptionHIGH SPEED SWITCHES
ManufacturerSTMicroelectronics
Overview The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) ) metal case. They are designed for high speed t(s switching applic. useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage. TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s) ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCEO Co.
Part Number2N2219A
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃. Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Curr.

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