2N2219A
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N2219 and 2N2219A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
2N2219 60
2N2219A 75
30 40
5.0 6.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=50V
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10m...
Representative 2N2219A image (package may vary by manufacturer)
