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  Microsemi Electronic Components Datasheet  

2N3791 Datasheet

PNP HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/379
Devices
2N3791
2N3792
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +1000C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly @ 28.57 mW/0C for TA > +250C
2) Derate linearly @ 0.857 mW/0C for TC > +1000C
2N3791 2N3792
60 80
60 80
7.0
4.0
10
5.0
85.7
-65 to +200
Max.
1.17
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
2N3791
2N3792
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 50 Vdc
2N3791
ICES
VCE = 70 Vdc
Collector-Emitter Cutoff Current
2N3792
VCE = 60 Vdc, VBE = 1.5 Vdc
2N3791
ICEX
VCE = 80 Vdc, VBE = 1.5 Vdc
2N3792
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Min.
60
80
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
5.0 mAdc
5.0
5.0 mAdc
5.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3791 Datasheet

PNP HIGH POWER SILICON TRANSISTOR

No Preview Available !

2N3791, 2N3792 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Base Cutoff Current
VCB = 60 Vdc
2N3791
VCB = 80 Vdc
Emitter-Base Cutoff Current
2N3792
VEB = 7.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 3.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
IC = 10 Adc, VCE = 4.0 Vdc
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 2.0 Adc
Base-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 2.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t 1.0 s
Test 1
VCE = 15 Vdc, IC = 10 Adc
Test 2
VCE = 40 Vdc, IC = 3.75 Adc
Test 3
VCE = 55 Vdc, IC = 0.9 Adc
2N3791
VCE = 65 Vdc, IC = 0.9 Adc
2N3792
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Min.
Max.
5.0
5.0
5.0
Unit
mAdc
mAdc
50 150
30 120
10
5.0
1.0 Vdc
2.5
1.5 Vdc
3.0
4.0 20
30 300
500
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N3791
Description PNP HIGH POWER SILICON TRANSISTOR
Maker Microsemi
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2N3791 Datasheet PDF






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