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2N3791 - PNP HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IB IC PT TJ, Tstg Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA > +250C 2) Derate linearly @ 0.857 mW/0C for TC > +1000C 2N3791 2N3792 60 80 60 80 7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.
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