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2N3791 Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

Overview: Inchange Semiconductor Silicon PNP Power Transistors.

General Description

·With TO-3 package ·plement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Product Specification 2N3791 2N3792 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2N3791 2N3792 Open emitter VCEO Collector-emitter voltage 2N3791 2N3792 Open base VEBO Emitter-base voltage Open collector IC Collector current IB Base current PD Total Power Dissipation TC=25℃ Tj Junction temperature Tstg Storage temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER R(th) jc Thermal resistance junction to case VALUE -60 -80 -60 -80 -7 -10 -4 150 200 -65~200 UNIT V V V A A W ℃ ℃ VALUE 1.17 UNIT ℃/W Inchange Semiconductor Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage 2N3791 2N3792 CONDITIONS IC=-0.2A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=-5A;

IB=-0.5A VBE(on)-1 Base-emitter on voltage IC=-5A ;

VCE=-2V VBE(on)-2 Base-emitter on voltage ICEX Collector cut-off current 2N3791 2N3792 IEBO Emitter cut-off current IC=-10A ;

2N3791 Distributor