Seme LAB 2N3792
PNP SILICON EPITAXIAL BASE POWER TANSISTORS
MECHANICAL DATA
Dimensions in mm(inches) 40.01 (1.575) Max. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 2 11.18 (0.440) 10.67 (0.420) 1 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 11.43 (0.450) 6.35 (0.250) 12.19 (0.48) 1.63 (0.064) 11.18 (0.44) 1.52 (0.060) 4.09 (0.161) 3.84 (0.151) 2 Pls PNP SILICON EPITAXIAL BASE POWER TANSISTORSAPPLICATIONS
Linear Power and SwitchingAPPLICATIONS
PIN 1 — Base 16.97 (0.668) 16.87 (0.664) TO3 (TO-204AA) PIN 2 — Emitter Case is Collector.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage(IE = 0) VCEO(sus) Collector – Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage(IC = 0) IC Collector Current IB Base Current PTOT Total Power Dissipation at Tcase = 25°C Tstg Storage Temperature Tj Junction Temperature THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction to Case - 80V - 80V - 7V - 10A - 4A 150W 65 to 200°C 200°C 1.17 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.