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2N3792 - Power Transistor

General Description

PNP silicon power transistor in a TO-3 package.

Designed for medium-speed switching and amplifier applications.

Key Features

  •   Excellent Safe Operating Areas.
  •   hFE (Min) 25 and 50 @ IC = 1A PNP Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Continuous Total Device Dissipation at Tc = 25°C Derate above 25°C Operating Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD Tj Rating Unit 80 80 V 7 10 A 4 150 0.857 W mW/°C -65 to +200 °C Electrical Characteristics (Ta = 25°C unless otherwi.

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Datasheet Details

Part number 2N3792
Manufacturer Multicomp
File Size 189.66 KB
Description Power Transistor
Datasheet download datasheet 2N3792 Datasheet

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Other Datasheets by Multicomp

Part Number Description
2N3700 Bipolar Transistor
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2N3773 Complementary Power Transistor
2N3055 Complementary Power Transistors
2N3055H 15A Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor Description: PNP silicon power transistor in a TO-3 package. Designed for medium-speed switching and amplifier applications. Features: •  Excellent Safe Operating Areas •  hFE (Min) 25 and 50 @ IC = 1A PNP Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Continuous Total Device Dissipation at Tc = 25°C Derate above 25°C Operating Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD Tj Rating Unit 80 80 V 7 10 A 4 150 0.