Multicomp 2N3792
Power Transistor
DESCRIPTION
: PNP silicon power transistor in a TO-3 package. Designed for medium-speed switching and amplifier applications.FEATURES
:● Excellent Safe Operating Areas
● hFE (Min) 25 and 50 @ IC = 1A PNP
ABSOLUTE MAXIMUM RATINGS
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Continuous Total Device Dissipation at Tc = 25°C Derate above 25°C Operating Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD Tj Rating Unit 80 80 V 7 10 A 4 150 0.857 W mW/°C -65 to +200 °CELECTRICAL CHARACTERISTICS
(Ta = 25°C unless otherwise specified) Parameter OFF Characteristics Collector - Emitter Breakdown Voltage (Note 1) Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics (Note 1) Symbol V(BR)CEO ICEX IEBO DC Current Gain Collector - Emitter Saturation Voltage Base-Emitter On Voltage Small-Signal Characteristics Current Gain-Bandwidth Product hFE VCE(sat)