| Part Number | 2N3792 Datasheet |
|---|---|
| Manufacturer | Seme LAB |
| Overview | 2N3792 MECHANICAL DATA Dimensions in mm(inches) 40.01 (1.575) Max. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 2 11.18 (0.440) 10.67 (0.420) 1 26.67 (1.050) Max. 4. c reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its. |
2N3792 Datasheet and Specifications PDF
The 2N3792 is a PNP SILICON EPITAXIAL BASE POWER TANSISTORS.
| Part Number | 2N3792 Datasheet |
|---|---|
| Description | PNP POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applica. 1.0 VCE(SAT) IC=5.0A, IB=500mA (2N3791, 2N3792) - 1.0 VBE(ON) VCE=2.0V, IC=5.0A (2N3789, 2N3790) - 2.0 VBE(ON) VCE=2.0V, IC=5.0A (2N3791, 2N3792) - 1.8 VBE(ON) VCE=4.0V, IC=10A - 4.0 hFE VCE=2.0V, IC=1.0A (2N3789, 2N3790) 25 90 hFE VCE=2.0V, IC=1.0A (2N3791, 2N3792) 50 180 hFE VCE=2. |
| Part Number | 2N3792 Datasheet |
|---|---|
| Description | PNP HIGH POWER SILICON TRANSISTOR |
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage. = 60 Vdc, VBE = 1.5 Vdc 2N3791 ICEX VCE = 80 Vdc, VBE = 1.5 Vdc 2N3792 Unit Vdc Vdc Vdc Adc Adc W W 0C Unit 0C/W Min. 60 80 TO-3* (TO-204AA) *See Appendix A for Package Outline Max. Unit Vdc 5.0 mAdc 5.0 5.0 mAdc 5.0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 . |
| Part Number | 2N3792 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Multicomp |
| Overview |
PNP silicon power transistor in a TO-3 package. Designed for medium-speed switching and amplifier applications.
Features:
• Excellent Safe Operating Areas • hFE (Min) 25 and 50 @ IC = 1A
PNP
Abso.
* Excellent Safe Operating Areas * hFE (Min) 25 and 50 @ IC = 1A PNP Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Continuous Total Device Dissipation at Tc = 25°C Derate above 25°C Operating Ju. |