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2N3792 - PNP HIGH POWER SILICON TRANSISTOR

Download the 2N3792 datasheet PDF. This datasheet also covers the 2N3791 variant, as both devices belong to the same pnp high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3791-Microsemi.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IB IC PT TJ, Tstg Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA > +250C 2) Derate linearly @ 0.857 mW/0C for TC > +1000C 2N3791 2N3792 60 80 60 80 7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.