Microsemi 2N3791
PNP HIGH POWER SILICON TRANSISTOR
| Part No. | 2N3791 |
|---|---|
| Datasheet | 2N3791 Download |
| Manufacturer |  Microsemi |
| Description | PNP HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IB IC PT TJ, Tstg Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA > +250C 2) Derate linearly @ 0.857 mW/0C for TC > +1000C 2N3791 2N3792 60 80 60 80 7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.17ELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc 2N3791 2N3792 V(BR)CEO Collector-Emitter Cutoff Current VCE = 50 Vdc 2N3791 ICES VCE = 70 Vdc Collector-Emitter Cutoff Current 2N3792 VCE = 60 Vdc, VBE = 1.5 Vdc 2N3791 ICEX VCE = 80 Vdc, VBE = 1.5 Vdc 2N3792 Unit Vdc Vdc Vdc Adc Adc W W 0C Unit 0C/W Min. 60 80 TO-3* (TO-204AA) *See Appendix A for Package Outline Max. U...