ABSOLUTE MAXIMUM RATINGS
Symbol VCBO Collector-BaseVoltage Ratings IE = 0 2N3789 2N3791 2N3790 2N3792 2N3789 2N3791 2N3790 2N3792 Value -80 Unit V -100 -60 V -80 -7 -10 -4 150 -65 to +200 V A A W °C VCEO VEBO IC IB PD TJ TS Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current IB = 0 IC = 0 Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case (Max) Value 1.17 Unit °C/W 05/11/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 VCE=-30 V, IB=0 2N3791 2N3790 VCE=-40 V, IB=0 2N3792 2N3789 VCE=-80 V, VEB=1.5 V 2N3791 2N3790 VCE=-100 V, VEB=1.5 V 2N3792 VCE=-60 V, VEB=1.5 V 2N3789 TC = 150°C 2N3791 VCE=-8...
Comset Semiconductor
