Inchange Semiconductor 2N3791
Silicon PNP Power Transistors
DESCRIPTION
●With TO-3 package●Complement to type 2N3715 ,2N3716
●Excellent safe operating area
APPLICATIONS
Designed for medium-speed switching and amplifier applications PINNING PIN 1 2 3DESCRIPTION
Base Emitter Collector Product Specification 2N3791 2N3792 Fig.1 simplified outline (TO-3) and symbolABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage 2N3791 2N3792 Open emitter VCEO Collector-emitter voltage 2N3791 2N3792 Open base VEBO Emitter-base voltage Open collector IC Collector current IB Base current PD Total Power Dissipation TC=25℃ Tj Junction temperature Tstg Storage temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER R(th) jc Thermal resistance junction to case VALUE -60 -80 -60 -80 -7 -10 -4 150 200 -65~200 UNIT V V V A A W ℃ ℃ VALUE 1.17 UNIT ℃/W Inchange Semiconductor Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage 2N3791 2N3792 CONDITI...