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  Microsemi Electronic Components Datasheet  

2N5339U3 Datasheet

NPN POWER SILICON SWITCHING TRANSISTOR

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
DEVICES
2N5339 2N5339U3
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TC = +25°C (3) – U3
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Air
1) Derate linearly 5.71mW/°C for TA > 25°C
2) Derate linearly 100mW/°C for TC > 25°C
3) Derate linearly 434mW/°C for TC > 25°C – U3
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Top , Tstg
RθJA
Value
100
100
6.0
1.0
5.0
1.0
17.5
75
-65 to +200
175
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50mAdc
Collector-Emitter Cutoff Current
VCE = 100Vdc
Collector-Emitter Cutoff Current
VCE = 90Vdc, VBE = 1.5Vdc
Symbol
Min.
Max.
V(BR)CEO
ICEO
ICEX
100
100
1.0
Collector-Base Cutoff Current
VCB = 100Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
ICBO
IEBO
1.0
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
TO-39
(TO-205AD)
U-3
(TO-276AA)
T4-LDS-0011 Rev. 2 (080693)
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N5339U3 Datasheet

NPN POWER SILICON SWITCHING TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.5Adc, VCE = 2.0Vdc
IC = 2.0Adc, VCE = 2.0Vdc
IC = 5.0Adc, VCE = 2.0Vdc
Symbol
hFE
Collector-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VCE(sat)
Base-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.5Adc, VCE = 10Vdc, f = 10MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz
Input Capacitance
VBE = 2.0Vdc, IC = 0, 100kHz f 1.0MHz
Symbol
|hfe|
Cobo
Cibo
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t 0.5s
Test 1
VCE = 2.0Vdc, IC = 5.0Adc
Test 2
VCE = 5.0Vdc, IC = 2.0Adc
Test 3
VCE = 90Vdc, IC = 55mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
Min.
60
60
40
Min.
3.0
Max.
Unit
240
0.7 Vdc
1.2
1.2 Vdc
1.8
Max.
15
250
1,000
Unit
pF
pF
T4-LDS-0011 Rev. 2 (080693)
Page 2 of 2


Part Number 2N5339U3
Description NPN POWER SILICON SWITCHING TRANSISTOR
Maker Microsemi
Total Page 2 Pages
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