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2N5672 - NPN HIGH POWER SILICON TRANSISTOR

Download the 2N5672 datasheet PDF. This datasheet also covers the 2N5671 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5671_Microsemi.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
2N5671 NPN HIGH POWER SILICON TRANSISTOR
2N5641 RF & Microwave Transistor
2N5642 RF & Microwave Transistor
2N5643 RF & Microwave Transistor
2N5683 NPN POWER SILICON TRANSISTOR

Full PDF Text Transcription

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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC www.DataSheet.net/ 2N5671 90 120 2N5672 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range 7.0 10 30 6.0 140 -65 to +200 Max. 1.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.
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