2N5672 Datasheet | Microsemi

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC .Data Sheet.net/ 2N5671 90 120 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature Range 7.0 10 30 6.0 140 -65 to +200 Max. 1.25 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 34.2 m W/0C for TA > +250C 2) Derate linearly 800 m W/0C for TC > +250C TO-3- (TO-204AA) - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 m Adc Collector-Emitter Breakdown Voltage IC = 200 m Adc Collector-Emitter Breakdown Voltage IC = 200 m Adc Collector-Emitter Cutoff Current VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE = 1.5 Vdc VCE = 135 Vdc, VBE = 1.5 Vdc 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 V(BR)CEO 90 120 110 140 120 150 10 12 10 Vdc V(BR)CER Vdc V(BR)CEX ICEO Vdc m Adc m Adc 2N5671 2N5672 ICEX 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978)...