2N5672 - SILICON HIGH POWER NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N5672
Manufacturer	TT Electronics
File Size	633.04 KB
Description	SILICON HIGH POWER NPN TRANSISTOR
Datasheet	2N5672 Datasheet

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SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 120V VEBO Emitter – Base Voltage 7.0V IC Continuous Collector Current 30A IB Base Current 10A PD Total Power Dissipation at TA = 25°C 6W Derate Above 25°C 34mW/°C PD Total Power Dissipation at TC = 25°C 140W Derate Above 25°C 800mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.