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2N5672 Datasheet PDF

TT 2N5672

SILICON HIGH POWER NPN TRANSISTOR

Part No. 2N5672
Datasheet 2N5672 Download
Manufacturer
TT
Description SILICON HIGH POWER NPN TRANSISTOR
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2N5672 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 120V VEBO Emitter – Base Voltage 7.0V IC Continuous Collector Current 30A IB Base Current 10A PD Total Power Dissipation at TA = 25°C 6W Derate Above 25°C 34mW/°C PD Total Power Dissipation at TC = 25°C 140W Derate Above 25°C 800mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.25 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
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