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  Microsemi Electronic Components Datasheet  

2N6211 Datasheet

PNP HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices
2N6211
2N6212
2N6213
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6211 2N6212 2N6213 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Temperature
VCEO
VCBO
VEBO
IB
IC
PT
Top, Tstg
225 300 350
275 350 400
6.0
1.0
2.0
3.0
35
-55 to +200
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance Junction-to-Case
1) Derate linearly 17.1 mW/0C for TA > +250C
2) Derate linearly 200 mW/0C for TC > +250C
RθJC
5.0 0C/W
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz
2N6211
2N6212
V(BR)CEO
2N6213
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50
2N6211
2N6212
V(BR)CER
2N6213
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 , VBE = -1.5 Vdc
2N6211
V(BR)CEX
2N6212
2N6213
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
225
300
350
250
325
375
275
350
400
TO-66*
(TO-213AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6211 Datasheet

PNP HIGH POWER SILICON TRANSISTOR

No Preview Available !

2N6211, 2N6212, 2N6213 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
VCE = 150 Vdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc, VBE = 1.5 Vdc
2N6211
VCE = 315 Vdc, VBE = 1.5 Vdc
2N6212
VCE = 360 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
2N6213
VCB = 275 Vdc
2N6211
VCB = 350 Vdc
2N6212
VCB = 400 Vdc
Emitter-Base Cutoff Current
2N6213
VEB = 6.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.8 Vdc
2N6211
IC = 1.0 Adc, VCE = 3.2 Vdc
2N6212
IC = 1.0 Adc, VCE = 4.0 Vdc
2N6213
IC = 1.0 Adc, VCE = 5.0 Vdc
2N6211
2N6212
2N6213
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
2N6211
2N6212
2N6213
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc
Turn-Off Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc
Test 2
All Types
VCE = 40 Vdc, IC = 0.875 Adc
Test 3
All Types
VCE = 225 Vdc, IC = 0.034 Adc
Test 4
2N6211
VCE = 300 Vdc, IC = 0.02 Adc
Test 5
2N6212
VCE = 350 Vdc, IC = 0.015 Adc
2N6213
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
Min.
Max.
5.0
Unit
mAdc
0.5
0.5 mAdc
0.5
15 mAdc
15
15
0.5 mAdc
10 100
10 100
10 100
30 175
30 175
30 150
1.4
1.6
Vdc
2.0
1.4 Vdc
4.0 20
220
0.6
3.1
pF
µs
µs
120101
Page 2 of 2


Part Number 2N6211
Description PNP HIGH POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 2 Pages
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