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2N6211 - PNP HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage VCEO 225 300 350 Vdc Collector-Base Voltage VCBO 275 350 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current Total Power Dissipation IC @ TA = +250C (1) @ TC = +250C (2) PT 2.0 Adc 3.0 W 35 W Operating & Storage Temperature Top, Tstg -55 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 17.1 mW/0C for TA > +250C 2) Derate linearly 200 mW/0C for TC > +250C 5.
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